Advancement: Phase-field modeling of resistive switching in two-terminal dielectric thin-film

Speaker Name: 
Foroozan S. Koushan
Speaker Title: 
Ph.D. Student
Start Time: 
Monday, December 2, 2019 - 3:00pm
End Time: 
Monday, December 2, 2019 - 4:30pm
Location: 
Engineering 2, Room 475

Abstract:  Emerging solid-state non-linear devices that directly emulate a range of synaptic activities occurring in biological systems play a key role in artificial neural networks. A large number of experimental studies suggest two-terminal resistive switching devices made of a dielectric thin film sandwiched by a pair of electrodes exhibit reversible multi-state switching behaviors fundamental to neuromorphic engineering. In my research, phase-field methodology is used to study reversible resistive switching behaviors that occur in dielectric thin films. The focus of this study is on dynamical evolution of domains made of electrical charges under the influence of spatially varying electric field and temperature, ultimately modeling formation and annihilation of conductive channels, resulting in ON and OFF states in two terminal resistive switching devices.

Event Type: 
Adancement/Defense
Advisor: 
Nobby Kobayashi
Graduate Program: 
Electrical Engineering Ph.D.