EE 178: Device Electronics

NEWS:

Office hours: Wednesday 2:00 - 4:00 pm, BE 253B
Secure link to all lecture notes and HW solutions
Page 206
Grades
Final Exam: March 18, 10:00 am - 1:00 pm, E2 215

Description
This course reviews the fundamental principles, device's materials, and design; and introduces the operation of several semiconductor devices. Topics include the motion of charge carriers in solids, equilibrium statistics, the electronic structure of solids, doping, the pn junction, the junction transistor, the Schottky diode, the field-effect transistor, the light-emitting diode, and the photodiode. (5 credits)

Intended audience: Undergraduate students who took EE145 and EE171 or graduate students.
Prerequisite: EE145 and EE171 or instructor permission

Textbooks:

Solid State Electronic Devices, Fifth Edition / Ben G. Streetman and Sanjay Banerjee

References:

1. Robert Pierret, "Semiconductor Device Fundamentals", Addison-Wesley.
2. Muller and Kamins, "Device Electronics for Integrated Circuits", Wiley.
3. Semiconductor Physics & Devices, Irwin, by D. A. Newman
4. Sze, "Physics of Semiconductor Devices", Wiley.
5. Singh, "Semiconductor Devices: an Introduction", McGraw-Hill.
6. Modular Series on Solid State Device, Addison-Wesley
- Volume I: Pierret, "Semiconductor Fundamentals"
- Volume II: Neudeck, "PN Junction Diode"
- Volume III: Neudeck, "Bipolar Junction Transistor"
- Volume IV: Pierret, "Field Effect Devices"
http://jas2.eng.buffalo.edu/applets/

Time: Tuesday/Thursday 2:00-3:45pm

Location: JBE 169

Course Instructor

Claire Gu

253B Baskin Engineering Building

Phone: (831) 459-5296

E-mail: c laire@soe.ucsc.edu

Office hours: W 2-4 pm (tentative)

Course Expectations

Learning occurs by the active involvement of the student. The student is expected to come to class prepared to think and learn. The lecture period will be used to establish fundamental concepts. During lecture time, you will be asked to participate in solving problems. Always bring your calculator. It also is helpful to bring your textbook along.

To get the most out of this class, you need to read the assigned sections in the textbook before coming to class.

Working Together

You are encouraged to work in groups and discuss about the homework assignments. However, each has to write his/her own solution and fully understand them.

Academic Dishonesty
Any confirmed academic dishonesty including but not limited to copying homeworks or cheating on exams, will result in a no-pass or failing grade. You are encouraged to read the campus policies regarding academic integrity. Examples of cheating include (but are not limited to):

Sharing results or other information during an examination.
Working on an exam before or after the official time allowed.
Submitting homework that is not your own work.
Reading another student's homework solution before it is due.
Allowing someone else to read your homework solution before the assignment is due.

If there is any question as to whether a given action might be construed as cheating, see me before you engage in any such action.

Homework Assignments

Homeworks will be assigned and collected during class sessions. Late homework will not be accepted or graded. Homework is graded in terms of it being complete, well organized, readable and showing evidence of thoughtful attention to the problem itself. Sloppy submissions will not be considered for grading.

Grading Method

The course will not be graded on a curve. It is possible for everyone to earn an "A" or for everyone to earn an "F".

Tentative Grading
Course Element:	Percentage of Course Grade:
Homework	0%
Midterm 1	30%
Midterm 2	30%
Final	40%
Total	100

Tentative Schedule

Lect.

Date
Topic
Reading Assignment

Homework due

1

1/4

3.1 Bonding Forces and Energy Bands in Solids

3.1.1 Bonding Forces in Solids

3.1.2 Energy Bands

3.1.3 Metals, Semiconductors, and Insulators

3.1.4 Direct and Indirect Semiconductors

3.2 Charge Carriers in Semiconductors

3.2.1 Electrons and Holes

3.2.2 Effective Mass

3.2.3 Intrinsic Material

3.2.4 Extrinsic Material

3.3 Carrier Concentrations

3.3.1 The Fermi level

3.3.2 Electron and Hole Concentrations at Equilibrium

3.3.3 Temperature Dependence of Carrier Concentrations

3.3.4 Compensation and Space Charge Neutrality

Review related materials from EE 145, and Ch.1 and Ch.2 in Streetman.

3.1, 3.1.1, 3.1.2, 3.1.3, 3.1.4, 3.2, 3.2.1, 3.2.2, 3.2.3, 3.2.4, 3.3, 3.3..1, 3.3.2, 3.3.3, 3.3.4

2

1/6

3.4 Drift of Carriers in Electric and Magnetic Fields

3.4.1 Conductivity and Mobility

3.4.2 Drift and Resistance

3.4.3 Effects of Temperature and Doping on Mobility

3.4.4 High-Field Effects

3.4.5 The Hall Effect

3.4, 3.4.1, 3.4.2, 3.4.3, 3.4.4, 3.4.5

3

1/11

4.1 Optical Absorption

4.2 Luminescence

4.3 Carrier Lifetime and Phtoconductivity

4.3.1 Direct Recombination of Electrons and Holes

4.3.2 Indirect Recombination: Trapping

4.3.3 Steady State Carrier Generation; Quasi-Fermi Levels

4.3.4 Photoconductive Devices

4.1, 4.2, 4.3, 4.3.1, 4.3.2, 4.3.3, 4.3.4

4

1/13

4.4 Diffusion of Carriers

4.4.1 Diffusion Processes

4.4.2 Diffusion and Drift of Carriers; Built-in Fields

4.4.3 Diffusion and Recombination; The Continuity Equation

4.4.4 Steady State Carrier Injection; Diffusion Length

4.4.5 The Haynes-Shockley Experiment

4.4, 4.4.1, 4.4.2, 4.4.3, 4.4.4, 4.4.5, 4.4.6

HW #1

5

1/18

5.2 Equilibrium Condition,

5.2.1 The Contact Potential

5.2.2 Equilibrium Fermi Levels

5.2.3 Space Charge at a Junction

5.1, 5.2, 5.2.1, 5.2.2, 5.2.3

6

1/20

5.3. Forward- and Reverse-Biased Junctions; Steady State Conditions

5.3.1 Qualitative Description of Current Flow at a Junction

5.3.2 Carrier Injection

5.3.2 Carrier Injection

5.3.3 Reverse Bias

5.3, 5.3.1, 5.3.2, 5.3.3

HW #2

7

1/25

5.4 Reverse-Bias Breakdown

5.4.1 Zener Breakdown

5.4.2 Avalanche Breakdown

5.4.3 Rectifiers

5.4.4 The Breakdown Diode

5.4, 5.4.1, 5.4.2, 5.4.3, 5.4.4

8

1/27

5.5 Trasient and A-C Conditions

5.5.1 Time Variation of Stored Charges

5.5.2 Reverse Recovery Transient

5.5.3 Switching Diodes

5.5.4 Capacitance of p-n Junctions

5.5, 5.5.1, 5.5.2, 5.5.3, 5.5.4

HW #3

9

2/1

5.7 Metal-Semiconductor Junctions

5.7.1 Schottky Barrier

5.7.2 Rectifying Contacts

5.7.3 Ohmic Contacts

5.7.4 Typical Schottky Barriers

5.7, 5.7.1, 5.7.2, 5.7.3, 5.7.4

2/3

Midterm #1

HW #4

10

2/8

6.1 Transistor Operation

6.1.1 The Load Line

6.1.2 Amplification and Switching

6.2 The Junction FET

6.2.1 Pinch-off and Saturation

6.2.2 Gate Control

6.2.3 Current-Voltage Charateristics

6.3 The Metal-Semiconductor FET

6.3.1 Structure

6.1, 6.1.1, 6.1.2, 6.2, 6.2.1, 6.2.2, 6.3.1

11

2/10

6.4 The Metal-Insulator-Semiconductor FET

6.4.1 Basic Operation

6.4.2 The Ideal MOS Capacitor

6.4.3 Effects of Real Surfaces (Flatband voltage)

6.4.4 Threshold Voltage

6.4.5 MOS Capacitance-Voltage Analysis

6.4, 6.4.1, 6.4.2, 6.4.3, 6.4.4, 6.4.5

HW#5

12

2/15

6.5 The MOS Field-Effect Transistor

6.5.1 Output Characteristics

6.5.2 Transfer Characterisitics

6.5.3 Mobility Model

6.5.4 Short Channel MOSFET I-V Characteristics

6.5.5 Control of Threshold Voltage

6.5, 6.5.1, 6.5.2, 6.5.3, 6.5.4, 6.5.5

13

2/17

7.1 Fundamentals of BJT Operation

7.2 Amplification with BJTs

7.4 Minority Carrier Distributions and Terminal Currents

7.4.1 Solution of the Diffusion Equation in the Base Region

7.4.2 Evaluation of the Terminal Currents

7.4.3 Approximation of the Terminal Currents

7.4.4 Current Transfer Ratio

7.1, 7.2, 7.3, 7.4, 7.4.1, 7.4.2, 7.4.3, 7.4.4

HW#6

14a

2/22

7.6 Switching

7.6.1 Cutoff

7.6.2 Saturation

7.6.3 The Switching Cycle

7.6.4 Specification for Switching Transistors

7.6, 7.6.1,. 7.6.2, 7.6.3, 7.6.4

14b

2/24

7.7 Other Important Effects

7.7.1 Drift in the Base Region

7.7.2 Base Narrowing

7.7.3 Avalanche Breakdown

7.7.4 Injection Level; Thermal Effects

7.7.5 Base Resistance and Emitter Crowding

7.7.6 Gummel-Poon Model

7.7.7 Kirk Effect

7.7, 7.7.1, 7.7.2, 7.7.3, 7.7.4, 7.7.5, 7.7.6, 7.7.7

HW#7

3/1

Midterm #2

15a

3/3

3.1.5 Variation of Energy Bands with Alloy Composition

5.8 Heterojunctions

8.1 Photodiodes

8.1.1 Current and Voltage in an Illuminated Junction

8.1.2 Solar Cells

8.1.3 Photodetectors

8.2 Light-Emitting Diodes

3.1.5, 5.8, 8.1, 8.1.1, 8.1.2, 8.1.3, 8.1.4, 8.2, 8.2.1, 8.2.2, 8.2.3

HW#8

15b

3/8

8.3 Lasers

8.4 Semiconductor Lasers

8.3, 8.4, 8.4.1, 8.4.2, 8.4.3,

8.4.4, 8.4.5

16

3/10

Review

3/18 (Friday)

Final, 10:00 am -1:00 pm, E2 215

Claire Gu

Last updated: 1/4/2005

Lect.	Date	Topic	Reading Assignment	Homework due
1	1/4	3.1 Bonding Forces and Energy Bands in Solids 3.1.1 Bonding Forces in Solids 3.1.2 Energy Bands 3.1.3 Metals, Semiconductors, and Insulators 3.1.4 Direct and Indirect Semiconductors 3.2 Charge Carriers in Semiconductors 3.2.1 Electrons and Holes 3.2.2 Effective Mass 3.2.3 Intrinsic Material 3.2.4 Extrinsic Material 3.3 Carrier Concentrations 3.3.1 The Fermi level 3.3.2 Electron and Hole Concentrations at Equilibrium 3.3.3 Temperature Dependence of Carrier Concentrations 3.3.4 Compensation and Space Charge Neutrality	Review related materials from EE 145, and Ch.1 and Ch.2 in Streetman. 3.1, 3.1.1, 3.1.2, 3.1.3, 3.1.4, 3.2, 3.2.1, 3.2.2, 3.2.3, 3.2.4, 3.3, 3.3..1, 3.3.2, 3.3.3, 3.3.4
2	1/6	3.4 Drift of Carriers in Electric and Magnetic Fields 3.4.1 Conductivity and Mobility 3.4.2 Drift and Resistance 3.4.3 Effects of Temperature and Doping on Mobility 3.4.4 High-Field Effects 3.4.5 The Hall Effect	3.4, 3.4.1, 3.4.2, 3.4.3, 3.4.4, 3.4.5
3	1/11	4.1 Optical Absorption 4.2 Luminescence 4.3 Carrier Lifetime and Phtoconductivity 4.3.1 Direct Recombination of Electrons and Holes 4.3.2 Indirect Recombination: Trapping 4.3.3 Steady State Carrier Generation; Quasi-Fermi Levels 4.3.4 Photoconductive Devices	4.1, 4.2, 4.3, 4.3.1, 4.3.2, 4.3.3, 4.3.4
4	1/13	4.4 Diffusion of Carriers 4.4.1 Diffusion Processes 4.4.2 Diffusion and Drift of Carriers; Built-in Fields 4.4.3 Diffusion and Recombination; The Continuity Equation 4.4.4 Steady State Carrier Injection; Diffusion Length 4.4.5 The Haynes-Shockley Experiment	4.4, 4.4.1, 4.4.2, 4.4.3, 4.4.4, 4.4.5, 4.4.6	HW #1
5	1/18	5.2 Equilibrium Condition, 5.2.1 The Contact Potential 5.2.2 Equilibrium Fermi Levels 5.2.3 Space Charge at a Junction	5.1, 5.2, 5.2.1, 5.2.2, 5.2.3
6	1/20	5.3. Forward- and Reverse-Biased Junctions; Steady State Conditions 5.3.1 Qualitative Description of Current Flow at a Junction 5.3.2 Carrier Injection 5.3.2 Carrier Injection 5.3.3 Reverse Bias	5.3, 5.3.1, 5.3.2, 5.3.3	HW #2
7	1/25	5.4 Reverse-Bias Breakdown 5.4.1 Zener Breakdown 5.4.2 Avalanche Breakdown 5.4.3 Rectifiers 5.4.4 The Breakdown Diode	5.4, 5.4.1, 5.4.2, 5.4.3, 5.4.4
8	1/27	5.5 Trasient and A-C Conditions 5.5.1 Time Variation of Stored Charges 5.5.2 Reverse Recovery Transient 5.5.3 Switching Diodes 5.5.4 Capacitance of p-n Junctions	5.5, 5.5.1, 5.5.2, 5.5.3, 5.5.4	HW #3
9	2/1	5.7 Metal-Semiconductor Junctions 5.7.1 Schottky Barrier 5.7.2 Rectifying Contacts 5.7.3 Ohmic Contacts 5.7.4 Typical Schottky Barriers	5.7, 5.7.1, 5.7.2, 5.7.3, 5.7.4
	2/3	Midterm #1		HW #4
10	2/8	6.1 Transistor Operation 6.1.1 The Load Line 6.1.2 Amplification and Switching 6.2 The Junction FET 6.2.1 Pinch-off and Saturation 6.2.2 Gate Control 6.2.3 Current-Voltage Charateristics 6.3 The Metal-Semiconductor FET 6.3.1 Structure	6.1, 6.1.1, 6.1.2, 6.2, 6.2.1, 6.2.2, 6.3.1
11	2/10	6.4 The Metal-Insulator-Semiconductor FET 6.4.1 Basic Operation 6.4.2 The Ideal MOS Capacitor 6.4.3 Effects of Real Surfaces (Flatband voltage) 6.4.4 Threshold Voltage 6.4.5 MOS Capacitance-Voltage Analysis	6.4, 6.4.1, 6.4.2, 6.4.3, 6.4.4, 6.4.5	HW#5
12	2/15	6.5 The MOS Field-Effect Transistor 6.5.1 Output Characteristics 6.5.2 Transfer Characterisitics 6.5.3 Mobility Model 6.5.4 Short Channel MOSFET I-V Characteristics 6.5.5 Control of Threshold Voltage	6.5, 6.5.1, 6.5.2, 6.5.3, 6.5.4, 6.5.5
13	2/17	7.1 Fundamentals of BJT Operation 7.2 Amplification with BJTs 7.4 Minority Carrier Distributions and Terminal Currents 7.4.1 Solution of the Diffusion Equation in the Base Region 7.4.2 Evaluation of the Terminal Currents 7.4.3 Approximation of the Terminal Currents 7.4.4 Current Transfer Ratio	7.1, 7.2, 7.3, 7.4, 7.4.1, 7.4.2, 7.4.3, 7.4.4	HW#6
14a	2/22	7.6 Switching 7.6.1 Cutoff 7.6.2 Saturation 7.6.3 The Switching Cycle 7.6.4 Specification for Switching Transistors	7.6, 7.6.1,. 7.6.2, 7.6.3, 7.6.4
14b	2/24	7.7 Other Important Effects 7.7.1 Drift in the Base Region 7.7.2 Base Narrowing 7.7.3 Avalanche Breakdown 7.7.4 Injection Level; Thermal Effects 7.7.5 Base Resistance and Emitter Crowding 7.7.6 Gummel-Poon Model 7.7.7 Kirk Effect	7.7, 7.7.1, 7.7.2, 7.7.3, 7.7.4, 7.7.5, 7.7.6, 7.7.7	HW#7
	3/1	Midterm #2
15a	3/3	3.1.5 Variation of Energy Bands with Alloy Composition 5.8 Heterojunctions 8.1 Photodiodes 8.1.1 Current and Voltage in an Illuminated Junction 8.1.2 Solar Cells 8.1.3 Photodetectors 8.2 Light-Emitting Diodes	3.1.5, 5.8, 8.1, 8.1.1, 8.1.2, 8.1.3, 8.1.4, 8.2, 8.2.1, 8.2.2, 8.2.3	HW#8
15b	3/8	8.3 Lasers 8.4 Semiconductor Lasers	8.3, 8.4, 8.4.1, 8.4.2, 8.4.3, 8.4.4, 8.4.5
16	3/10	Review
	3/18 (Friday)	Final, 10:00 am -1:00 pm, E2 215