University of California at
Santa Cruz
Baskin School
of Engineering
|
EE 178: Device
Electronics
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QUICK ACCESS
Last Updated 6/12/2006
News
Important class information will be posted here.
The last homework has been graded and is available for pick-up in the envelope outside of Dmitry's office, Baskin Engineering room 350D.
Don't forget when studying for the final to look at some of the websites below and to play with the device simulation applets. In particular try predicting what will happen and why when you change a particular parameter in a particular way. If your prediction is wrong then be sure to figure out why. This is a much more interesting and enjoyable way to get an understanding of this material that just trying to memorize a bunch of unrelated facts...
The final will be closed book and closed notes, calculators will be allowed and probably needed for some numerical calculations. You will be provided with a sheet with material properties much the same as the one with the midterm but in addition you will be provided with all of the equations and information listed inside the front and back covers of the text book. If you have other information from the class that you would be more comfortable having let me know and I will consider it.
By request here is a link to a handout that might help clarify the signs of the different terms in the threshold voltage equation. Hope this helps.
I have added some links that might be useful to review if the differential equation solutions have proven a bit mysterious to you. Up to now you have mostly encountered linear differential equations with constant coefficients, unfortunately the ones we are encountering now are more complex. Fortunately they are relatively easy to solve. The equations we have been solving have all turned out to be separable, this means that the solutions can be found by straight forward, if somewhat messy, integration. Here are two useful pages, the first is a short review of separable differential equations, and the second a quick review and explanation of the change of variables used in their solution. I hope this helps clarify this material.
Interesting and Useful Links:
Course
Text Companion Website Click on the Errata Link for the Important errors
in the text
Transistorized! History of the
Transistor and More.
Semiconductor Physics Demonstration
Applets Excellent Animations of Semiconductor Device Physics
More Semiconductor
Demonstration Applets From University of Iowa-Winston Chan
Britney Spears Guide to Semiconductor
Physics Emphasis on Optoelectronics
The link to the cool 3-d plots for the MOSFETs is here 3-D-MOSFETs
Avalanche
Photodiode
Helpful links on Hyperbolic Functions:
Hyperbolic
Trigonometry, Hyperbolic
Trigonometry Survival 101, MathWorld
Historic Links
Transistor Museum
Course
Description
EE178
This course reviews the fundamental principles, materials, and design
and introduces the operation of several semiconductor devices. Topics include
the motion of charge carriers in solids, equilibrium statistics, the electronic
structure of solids, doping, the pn junction, the junction transistor, the
Schottky diode, the field-effect transistor, the light-emitting diode, and
the photodiode. Students are NOT billed for a materials fee. Prerequisite(s):
Electrical Engineering 145 and Computer Engineering 171 or Electrical Engineering
171. May be repeated for credit. C. Gu, K. Pedrotti
Course Instructor
Ken Pedrotti
253C Baskin Engineering
Building
Phone: (831) 459-1229
E-mail: pedrotti"at"ee.ucsc.edu
Office hours: Noon-2pm on Tuesdays, everyday after class, by appointment
or whenever you can snag me.
Lecture
Times and Location
Tu-Th 10-11:45 am
Baskin Engineering Room 165
Discussion
sections
Will be held by popular request on Wednesday 2-4 in Dmitry's office. Come and hash this stuff out... We will also schedule a review session prior to the final.
TA
Dmitry Kozak
email dkozak"at"ucsc.edu
Office Baskin Engineering Room 350D
Required
Textbook
Solid
State Electronics Devices, 6th Edition
Ben Streetman, University of Texas, Austin
Sanjay Banerjee, University of Texas, Austin
ISBN: 0-13-025538-6
Publisher: Prentice Hall
Copyright: 2000
Format: Cloth; 558 pp
Published: 11/08/1999
Recommended Reading
Crystal
Fire: The Invention of the Transistor and the Birth of the Information Age
(Sloan Technology Series)
Michael Riordan, Lillian Hoddeson; Paperback
1998 / paperback / ISBN 0-393-31851-6
1997 / hardcover / ISBN 0-393-04124-7
6" x H" / 352 pages / Science
Alternative
Texts
Sometimes when we have problems understanding a concept it is useful to
consult other texts for alternate explanations. Here are some other books
you might find useful tht are more or less at the same level as this class:
1. Robert Pierret, "Semiconductor Device Fundamentals", Addison-Wesley.
2. Muller and Kamins, "Device Electronics for Integrated Circuits",
2nd Edition, Wiley.
3. Semiconductor Physics & Devices, Irwin, by D. A. Newman
4. Sze, "Physics of Semiconductor Devices", Wiley.
5. Singh, "Semiconductor Devices: an Introduction", McGraw-Hill.
6. Modular Series on Solid State Device, Addison-Wesley
Volume I: Pierret, "Semiconductor Fundamentals"
Volume II: Neudeck, "PN Junction Diode"
Volume III: Neudeck, "Bipolar Junction Transistor"
Volume IV: Pierret, "Field Effect Devices"
Homework Assignments
Homeworks will be assigned and collected during class sessions,
and will generally follow a weekly sequence. Solutions are posted on the
web site on the date of collection. Thus, late homework will not be accepted
or graded. Homework is graded in terms of it being complete, well organized,
readable and showing evidence of thoughtful attention to the problem itself.
Sloppy submissions will not be considered for grading.
Grading Method
The course will not be graded on a curve. Well it also won't be graded solely on a absolute scale either. It wil be a combination of the two. It is
possible for everyone to earn an “A” or for everyone to earn
an “F”. You have to get a passing grade
on the final in order to pass the class, this will likely be set at around 50% unless I come up accidentially with a killer final. Your final course grade
thus depends only slightly on any one else's performance. Generally speaking you learn more trying to explain something to someone than they manage to pick-up. Paradoxically teaching is the best way to learn. Thus it is to
your benefit to find a group of people you can study with and to help each
other learn. Grad students will be graded separately from undergrads so don't worry about excessive unfair competition.
Tentative Grading Scheme:
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Grading
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Course Element
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Percentage of Course Grade
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Homework
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20 %
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Midterm
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30 %
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Final Exam
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40 %
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Quiz
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10 %
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Total
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100 %
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Study Suggestions for EE178 (and
Upperdivision Engineering Courses in general)
1) Do the reading before each lecture, the readings are listed for each lecture
in the schedule below.
2) Read with a pencil and paper and try to do all the examples before you
read their solutions. This is very valuable. I often get compalints bout there not being enough examples, this is the best way to get the most out of the ones that there are.
3) Seriously engage with all the homework problems, try them all before you
work with someone else. There is no substitute for doing lots of problems
to learn this material.
4) Make a copy of your homeworks and check your result against the solutions.
Go back and figure out what you didn't understand. Do this before I figure it out on a test...
5) This class is challenging and moves rapidly, falling behind is fatal.
The results from one week will be used the next.
6) You need to be able to figure out what you don't understand and then ask
your fellow students or the instructor for help if you cannot figure it out
on your own.
7) Take notes and review them before lecture.
8) You are encouraged to work in groups and discuss about the homework
assignments. However, each has to write his/her own solution and fully understand
them.
Course
Expectations
Learning occurs by the active involvement of the student. Consequently there
will be many different opportunities for active learning, such as cooperative
problem-solving. The student is expected to come to class prepared to think
and learn. The lecture period will be used to establish fundamental concepts.
During lecture time, you will be asked to participate in solving problems.
Always bring your calculator to lecture. It also is helpful to bring your
textbook along.
To get the most out of this class, you need to read the assigned sections
in the textbook before coming to class. There will be quizzes in the lab
and lecture sessions.
Academic
Dishonesty
Working Together
You are encouraged to work in groups and discuss about the homework assignments.
However, each has to write his/her own solution and fully understand them.
Academic Dishonesty
Any confirmed academic dishonesty including but not limited to copying homeworks
or cheating on exams, will result in a no-pass or failing grade and automatic
referral of the case of suspected policy violation to your college for further
disciplinary action. You are encouraged to read the campus policies regarding
academic integrity. Examples of cheating include (but are not limited to):
* Sharing results or other information during an examination.
* Working on an exam before or after the official time allowed.
* Submitting homework that is not your own work.
* Reading another student's homework solution before it is due.
* Allowing someone else to read your homework solution before the assignment
is due.
If there is any question as to whether a given action might be construed
as cheating, see me before you engage in any such action.
Top of page
Homework
HW1 from "Solid State Electronic Devices" Due Thursday
4/13/2005 at the beginning of lecture. Problems:
3.2, 3.3, 3.10, 3.11, 3.13, 3.16, 3.17
Take care to understand and draw proper simplified band diagrams, understand
these we will be using them. Also be careful to consider whether velocity
saturation would be expected or not. Think about what the results of your
problems mean...Also be sure to try the self quiz questions, try them first
and then check, the answers are in the back. Be sure that you understand
them, . If not be sure to ask me, these have a tendency to show up on in-class
quizzes and tests.
Homework 1 Solution
HW2 from "Solid State Electronic Devices" Due Thursday
4/20 Problems:
HW3 from "Solid State Electronic Devices" Problems: Due Thursday 4/27
5.7, 5.8, 5.9, 5.11, 5.15, 5.19
HW4 from "Solid State Electronic Devices" Problems: Due Thursday 5/4
5.16, 5.23, 5.25, 5.27, 5.35, 5.37
HW5 from "Solid State Electronic Devices" Problems: Due 5/11
HW6 from "Solid State Electronic Devices" Problems: Due 5/18
HW7 from "Solid State Electronic Devices" Problems:
6.12, 6.13, 6.18, 6.19, 6.20, 6.21, 6.27
HW8 from "Solid State Electronic Devices" Problems:
Homework 8 Solution
7.3, 7.4, 7.5, 7.6, 7.7, 7.9
HW9 from "Solid State Electronic Devices" Problems:
Homework 9 Solution
7.12, 7.18, 7.19, 7.20, 7.23, 8.1, 8.4, 8.6
Solutions are posted here on the date of collection. Thus, late homework
will not be accepted or graded.
Top of page
Tentative
Schedule
The reading assignment should be completed prior to the
lecture, come prepared for quizzes about the previous
lectures.
Quizzes will be unannounced and be given at the beginning of a lecture.
They cannot be made up if you are late for class or can't make it to class for
any other reason.
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Lecture
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Date
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Topic
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Reading Assignment
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1
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Lecture 1
Introduction to the Class
3.1 Bonding Forces and Energy
Bands in Solids
3.1.1 Bonding Forces in Solids
3.1.2 Energy Bands
3.1.3 Metals, Semiconductors, and Insulators
3.1.4 Direct and Indirect Semiconductors
3.2 Charge Carriers in Semiconductors
3.2.1 Electrons and Holes
3.2.2 Effective Mass
3.2.3 Intrinsic Material
3.2.4 Extrinsic Material
3.3 Carrier Concentrations
3.3.1 The Fermi level
3.3.2 Electron and Hole Concentrations at Equilibrium
3.3.3 Temperature Dependence of Carrier Concentrations
3.3.4 Compensation and Space Charge Neutrality
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3.1, 3.1.1, 3.1.2, 3.1.3, 3.1.4, 3.2, 3.2.1, 3.2.2, 3.2.3, 3.2.4, 3.3,
3.3..1, 3.3.2, 3.3.3, 3.3.4
Crystal
Viewer
AlGaAs
Energy Bands
Fermi
Function
Fermi
Level and Carrier Concentration
Fermi
level-Density of States and Carrier Concentration
Fermi-Dirac
vs Maxwell-Bolltzman Statistics
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2
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Lecture 2
Overview of Semiconductor Technology
History of the invention of the Transistor
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Review related materials from EE 145,
and Ch.1 and Ch.2 in Streetman. |
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3
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Lecture 3 Intended
Slides
Lecture 3
Actual slides used
3.4 Drift of Carriers in Electric and Magnetic Fields
3.4.1 Conductivity and Mobility
3.4.2 Drift and Resistance
4.3.4 Photoconductive Devices
3.4.3 Effects of Temperature and Doping on Mobility
3.4.4 High-Field Effects
3.4.5 The Hall Effect
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3.4, 3.4.1, 3.4.2,
4.3.4, 3.4.3, 3.4.4, 3.4.5
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4
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Lecture 4
4.1 Optical Absorption
4.2 Luminescence
4.3 Carrier Lifetime and Phtoconductivity
4.3.1 Direct Recombination of Electrons and Holes
4.3.2 Indirect Recombination: Trapping
4.3.3 Steady State Carrier Generation; Quasi-Fermi Levels
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4.1, 4.2, 4.3, 4.3.1, 4.3.2, 4.3.3
Recombination
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5
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Lecture 5
4.4 Diffusion of Carriers
4.4.1 Diffusion Processes
4.4.2 Diffusion and Drift of Carriers; Built-in Fields
4.4.3 Diffusion and Recombination; The Continuity Equation
4.4.4 Steady State Carrier Injection; Diffusion Length
4.4.5 The Haynes-Shockley Experiment
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4.4, 4.4.1, 4.4.2, 4.4.3, 4.4.4, 4.4.5, 4.4.6
Haynes
Shockley Expt
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6
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Lecture 6
5.2 Equilibrium Condition,
5.2.1 The Contact Potential
5.2.2 Equilibrium Fermi Levels
5.2.3 Space Charge at a Junction
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5.1, 5.2, 5.2.1, 5.2.2, 5.2.3
Formation
of a PN Junction
Space
Charge and Electric Field
Currents
Approaching Equilibrium
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7
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Lecture 7
5.3. Forward- and Reverse-Biased Junctions; Steady State
Conditions
5.3.1 Qualitative Description of Current Flow at a Junction
5.3.2 Carrier Injection
5.3.2 Carrier Injection
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5.3, 5.3.1, 5.3.2, 5.3.3
Biased
PN Junction
Space
Charge & Field
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8
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4/27
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Lecture 8
5.3.3 Reverse Bias
5.4 Reverse-Bias Breakdown
5.4.1 Zener Breakdown
5.4.2 Avalanche Breakdown
5.4.3 Rectifiers
5.4.4 The Breakdown Diode |
5.4, 5.4.1, 5.4.2, 5.4.3, 5.4.4
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9
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5/2
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Lecture 9
5.5 Trasient and A-C Conditions
5.5.1 Time Variation of Stored Charges
5.5.2 Reverse Recovery Transient
5.5.3 Switching Diodes
5.5.4 Capacitance of p-n Junctions |
5.5, 5.5.1, 5.5.2, 5.5.3, 5.5.4
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10
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Thurs. 5/4
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Midterm |
Midterm Solution
Midterm Class Results |
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11
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5/9
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Lecture 10
5.7 Metal-Semiconductor Junctions
5.7.1 Schottky Barrier
5.7.2 Rectifying Contacts
5.7.3 Ohmic Contacts
5.7.4 Typical Schottky Barriers |
5.7, 5.7.1, 5.7.2, 5.7.3, 5.7.4
Schottky
Diode
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12
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5/11
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Lecture 11
6.1 Transistor Operation
6.1.1 The Load Line
6.1.2 Amplification and Switching
6.2 The Junction FET
6.2.1 Pinch-off and Saturation
6.2.2 Gate Control
6.2.3 Current-Voltage Charateristics
6.3 The Metal-Semiconductor FET
6.3.1 Structure |
6.1, 6.1.1, 6.1.2, 6.2, 6.2.1, 6.2.2, 6.2.3, 6.3.1, 6.3.2,
6.3.3
JFET
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13
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Lecture 12
6.4 The Metal-Insulator-Semiconductor FET
6.4.1 Basic Operation
6.4.2 The Ideal MOS Capacitor
6.4.3 Effects of Real Surfaces (Flatband voltage)
6.4.4 Threshold Voltage
6.4.5 MOS Capacitance-Voltage Analysis |
6.4, 6.4.1, 6.4.2, 6.4.3, 6.4.4, 6.4.5
Work
functions
MOSCAP
MOS
Equilibrium Band Diagram
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14
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Lecture 13
6.5 The MOS Field-Effect Transistor-Idealized Basic Operation
6.5.1 Output Characteristics
6.5.2 Transfer Characteristics
6.5.3 Mobility Models
6.5.6 Substrate bias effects
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6.5, 6.5.1, 6.5.2, 6.5.3, 6.5.4, 6.5.5
MOS
FET 1
MOS
FET 2
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15
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Lecture 14 The MOS Transistor-Scaling, short channel
effects
6.5.4 Short Channel MOSFET i-V Characteristics
6.5.5 Control of Threshold Voltage
6.5.7 Subthreshold Characteristics
6.5.8 Equivalent Circuit for the MOSFET
6.5.9 MOSFET Scaling and Hot Electron Effects
6.5.10 Drain Induced Barrier lowering
6.5.11 Short Channel and Narrow Width Effect
6.5.12 Gate-Induced Drain Leakage
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16
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Lecture 15
7.1 Fundamentals of BJT Operation
7.2 Amplification with BJTs
7.4 Minority Carrier Distributions and Terminal Currents
7.4.1 Solution of the Diffusion Equation in the Base Region
7.4.2 Evaluation of the Terminal Currents
7.4.3 Approximation of the Terminal Currents
7.4.4 Current Transfer Ratio |
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17
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Lecture 16
7.5 Generalized Biasing
7.5.1 The Coupled Diode Model
7.5.2 Charge Control Analysis
7.6 Switching
7.6.1 Cutoff
7.6.2 Saturation
7.6.3 The Switching Cycle
7.6.4 Specification for Switching Transistors |
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18
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Lecture 17
7.7 Other Important Effects
7.7.1 Drift in the Base Region
7.7.2 Base Narrowing
7.7.3 Avalanche Breakdown
7.7.4 Injection Level; Thermal Effects
7.7.5 Base Resistance and Emitter Crowding
7.7.6 Gummel-Poon Model
7.7.7 Kirk Effect |
7.7, 7.7.1, 7.7.2, 7.7.3, 7.7.4, 7.7.5, 7.7.6, 7.7.7
Long
Base Short Base Transistor
BJT
Base Simulation
BJT
Switching
BJT
Equivalent Circuit
Ebers-Moll
Model
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19
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Lecture 18
3.1.5 Variation of Energy Bands with Alloy Composition
5.8 Heterojunctions
8.1 Photodiodes
8.1.1 Current and Voltage in an Illuminated Junction
8.1.2 Solar Cells
8.1.3 Photodetectors
8.2 Light-Emitting Diodes
Lasers
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3.1.5, 5.8, 8.1, 8.1.1, 8.1.2, 8.1.3, 8.1.4, 8.2, 8.2.1,
8.2.2, 8.2.3
PIN
Diode 1
PIN
Diode 2
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20
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Lecture 19
No additional reading on these topics Optoelectronic Devices
SCRs
CMOS
IGBJTs
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Final
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Wednesday June 14th 12 noon to 3 pm.
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Top of page
Copyright: Ken Pedrotti 2006